2SD2114 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SD2114

SOT-23 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

JC(T SOT-23 Plastic-Encapsulate Transistors

2SD2114 TRANSISTOR (NPN)

FEATURES

z High DC current gain.

z High emitter-base voltage.

z Low VCE (sat).

MARKING: BBV,BBW

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

25

20

12

0.5

0.25

150

-55-150

Unit

V

V

V

A

W

℃

℃

SOT-23

1. BASE

2.EMITTER

3.COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

output capacitance

On resistance

Symbol

Test conditions

Min

V(BR)CBO

IC=10μA,IE=0

25

V(BR)CEO IC =1mA, IB=0

20

V(BR)EBO

IE=10μA, IC=0

12

ICBO

VCB=20 V, IE=0

IEBO

VEB=10V,IC=0

hFE

VCE=3V, IC=10mA

820

VCE(sat)

IC= 500mA, IB=20 mA

fT

VCE=10V, IC=50mA

f=100MHz

Cob

R(on)

VCB=10V,IE=0,f=1MHz

Vin=0.1V(rms),IB=1mA,

f=1KHZ

Typ Max Unit

V

V

V

0.5 μA

0.5 μA

2700

0.4

V

350

MHz

8

pF

0.8

Ω

CLASSIFICATION OF hFE

Rank

Range

V

820-1800

W

1200-2700

www.cj-elec.com

1

CA,JOucnt,20154

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