2SC2618 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SC2618

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC2618

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

35

V

35

V

4

V

500

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 35

—

voltage

Collector to emitter breakdown V(BR)CEO 35

—

voltage

Emitter to base breakdown

V(BR)EBO

4

—

voltage

Collector cutoff current

DC current transfer ratio

I CBO

—

—

hFE1*1

60

—

hFE2

10

—

Collector to emitter saturation VCE(sat)

—

voltage

Base to emitter voltage

VBE

—

0.2

0.64

Note: 1. The 2SC2618 is grouped by hFE1 as follows.

Grade

B

C

D

Mark

RB

RC

RD

hFE1

60 to 120 100 to 200 160 to 320

Max

—

—

—

0.5

320

—

0.6

—

Unit

V

V

V

µA

V

V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IC = 0

VCE = 3 V, IC = 10 mA

(Pulse test)

VCE = 3 V, IC = 500 mA

(Pulse test)

IC = 150 mA, IB = 15 mA

(Pulse test)

VCE = 3 V, IC = 10 mA

(Pulse test)

See characteristic curves of 2SC1213.

2

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