2SC535 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
2SC535 Datasheet PDF : 12 Pages
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2SC535
Reverse Transfer Admittance
Characteristics
Reverse Transfer Conductance gre (mS)
–0.20 –0.16 –0.12 –0.08 –0.04
0
yre = gre + jbre
VCE = 6 V
f = 50 MHz
–0.2
70
100 –0.4
150
–0.6
200
–0.8
IC = 5 mA 3 2 1
–1.0
Output Admittance Characteristics
2.4
yoe = goe + jboe
2.0 VCE = 6 V
1.6
IC = 1 mA 2 3
5
f = 200 MHz
1.2
150
0.8
100
70
0.4
50
0
0.1 0.2 0.3 0.4 0.5 0.6
Output Conductance goe (mS)
Forward Transfer Admittance
Characteristics
Forward Transfer Conductance gfe (mS)
0 20 40 60 80 100 120
–20
IC = 1 mA
–40
2 mA
–60
3 mA
yfe = gfe + jbfe
VCE = 6 V
f = 50 MHz
–80
–100
5 mA
200
70
100
150
–120
Input Admittance vs. Collector
to Emitter Voltage
10
bie
5
yie = gie + jbie
IC = 1 mA
f = 100 MHz
2
gie
1.0
0.5
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
8
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