2SC535 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

2SC535

Silicon NPN Epitaxial Planar

Hitachi -> Renesas Electronics 

Typical Transfer Cahracteristics (1)

20

VCE = 6 V

16

12

8

4

0

0.6

0.7

0.8

Base to Emitter Voltage VBE (V)

2SC535

Typical Transfer Cahracteristics (2)

5

VCE = 6 V

4

3

2

1

0

0.6

0.7

0.8

Base to Emitter Voltage VBE (V)

Collector Output Capacitance vs.

Collector to Base Voltage

1.5

f = 1 MHz

IE = 0

1.3

1.1

0.9

0.7

0.5

0.3

1.0

3

10

30

Collector to Base Voltage VCB (V)

5

Share Link: