2SC535 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SC535

Silicon NPN Epitaxial Planar

Hitachi -> Renesas Electronics 

2SC535

Forward Transrer Admittance vs.

Collector Current

100

yfe = gfe + jbfe

50

VCE = 6 V

f = 100 MHz

20

gfe

–bfe

10

5

2

1

0.1 0.2

0.5 1.0 2

5 10

Collector Current IC (mA)

Output Admittance vs. Collector

to Emitter Voltage

2.0

0.2

goe

1.0

0.1

boe

0.5

yeo = goe + jboe

IC = 1 mA

f = 100 MHz

0.2

0.05

0.02

0.1

1

2

0.01

5

10

20

Collector to Emitter Voltage VCE (V)

Output Admittance vs. Collector Current

2.0

1.0

boe

0.5

0.2

0.1

0.05

0.02

0.1

goe

yoe = goe + jboe

VCE = 6 V

f = 100 MHz

0.2 0.5 1.0 2

5 10

Collector Current IC (mA)

10

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