2SC5247 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SC5247

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC5247

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Note: Marking is “ZD–”.

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

50

mA

80

mW

150

°C

–55 to +150

°C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Symbol Min

V(BR)CBO

15

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

Gain bandwidth product

Power gain

fT

10.5

PG

14

Noise figure

NF

—

Typ

—

—

—

—

100

0.47

13.5

17

1.2

Max

—

1

1

10

160

0.75

—

—

2.5

Unit

V

µA

mA

µA

pF

GHz

dB

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 4 V, IC = 20 mA

VCB = 5 V, IE = 0,

f = 1 MHz

VCE = 4 V, IC = 20 mA

VCE = 4 V, IC = 20 mA,

f = 900 MHz

VCE = 4 V, IC = 5 mA,

f = 900 MHz

2

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