2SC3060 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2SC3060

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

2SC3060

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= 1mA; RBE= °°

V(BR)CBO Collector-Base Breakdown Voltage

lc= 1 mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; lc= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.4A

VeE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

lo= 2A; IB= 0.4A

VCB= 1000V; !E=O

VCB= 1000V; IE= 0; Tc= 100'C

VEB= 6V; lc= 0

HFE

DC Current Gain

lc= 2A; VCE= 5V

fy

Current-Gain—Bandwidth Product

IC=0.5A;VCE=10V

COB

Output Capacitance

lE=0;VcB=10V;ftest= 1.0MHz

Switching times

tr

Rise Time

tstg

Storage Time

tf

Fall Time

lc= 2A, IB1= 0.2A; IB2= -0.6A;

Vcc= 400V

MIN TYP. MAX UNIT

850

V

1200

V

7

V

1.5

V

2.0

V

0.1

1.0

mA

100 u A

10

30

8

MHz

120

PF

0.5 u s

3.5 u s

0.3 M s

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