2SC3076(2002) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC3076 Datasheet PDF : 5 Pages
| |||
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications
Power Switching Applications
2SC3076
Unit: mm
· Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
· Excellent switching time: tstg = 1.0 µs (typ.)
· Complementary to 2SA1241
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
50
V
50
V
5
V
2
A
1
A
1.0
W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2002-07-23
Share Link: 