2SC4423 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC4423 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4423
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
lc=1mA;lE=0
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 5mA;RBE= °°
V(BR)EBO Emitter-Base Breakdown Voltage
lE=1mA; lc=0
VcE(sat) Collector-Emitter Saturation Voltage IC=8A;IB=1.6A
VeE(sat) Base-Emitter Saturation Voltage
lc=8A;lB=1.6A
ICBO
Collector Cutoff Current
VCB= 400V; le= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
\c= 16A; VCE=5V •
hpE-2
DC Current Gain
lc= 8A; VCE= 5V
hFE-3
DC Current Gain
fl
Current-Gain—Bandwidth Product
lc=10mA; VCE=5V
lc= 1.6A; VCE= 10V
COB
Output Capacitance
IE=0; VCB= 10V; ftest= 1-OMHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 10A, IB1= 2A; IB2= -4A
RL= 20 Q ; Vcc= 200V
MIN TYP. MAX UNIT
500
V
400
V
7
V
0.8
V
1.5
V
10
uA
10
uA
15
50
10
10
20
MHz
160
PF
0.5 u s
2.5
us
0.3
us
hpE-1 Classifications
L
M
N
15-30
20-40
30-50
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