2SC4596 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC4596 Datasheet PDF : 2 Pages
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Jsii£U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4596
DESCRIPTION
• Low Collector Saturation Voltage
: VCE(sat)= 0.3V(Max)@ lc= 3A
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 60V (Min)
• Complement to Type 2SA1757
APPLICATIONS
• Designed for high speed and power switching applications
PIN 1.BASE
2.COLLECTOR
3. EMITTER
TO-220F package
.C -
• s-
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25'C
PC
Collector Power Dissipation
@ Ta=25"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
10
A
25
W
2
150
°C
-55-150
•c
• R-
0
J --
N-
mm
DIM MIN
A 14.95
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
Q 2.70
R 2.20
S 2.65
g 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
N'.l Semi-Conductors reserves the right to change test conditions, parameter limits find package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placingorders.
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