2SC4745 Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SC4745 Datasheet PDF : 2 Pages
| |||
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; RBE= °°
V(BR)EBO Emitter-Base Breakdown Voltage
lE=10mA;lc=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 1A
VeE(sat) Base-Emitter Saturation Voltage
lc= 5A; IB= 1A
ICES
Collector Cutoff Current
VCE= 1 500V ; RBE= 0
hFE
DC Current Gain
tf
Fall Time
lc=1A;V0E=5V
|Cp=5A,lB1=1A;fH= 64kHz
2SC4745
MIN TYP. MAX UNIT
800
V
6
V
5.0
V
1.5
V
500 u A
7
30
0.4 u s
Share Link: 