2SC4745 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC4745 Datasheet PDF : 2 Pages
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J.E11S.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon NPN Power Transistor
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
APPLICATIONS
• Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
Vceo Collector-Emitter Voltage
800
V
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4745
1
II
1I
jI
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i.'
2
PIN 1 BASE
2. COLLECTOR
3. EMITTER
TO-3PML package
1
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A
j -*• C -t~
B
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P
- .• A
I1
H
z
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<T * -L
VEBO Emitter-Base Voltage
Ic
Collector Current- Continuous
lc(peak) Collector Current-Peak
lc(surge) Collector Current-Surge
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
6
V
6
A
7
A
16
A
50
W
150
'C
-55-150
°c
mm
DIM MIN MAX
A 19.90 20.10
B 15.90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.10
H 5.90 6,10
J 0.595 0.606
K 22,30 22,50
L 1.90 2.10
N 10.80 11.00
Q 4.90 5.10
R 3.75 3.95
S 3.20 3.40
U 9.90 10.10
V 4.70 4.90
2 1.90 2,10
NJ Semi-Conductorsreserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductorsis believed to be both accurate and reliable at the time of going
lo press. I lowever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
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