2SC4944 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
2SC4944 Datasheet PDF : 3 Pages
| |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-353 Plastic-Encapsulate Transistors
2SC4944 DUAL TRANSISTOR (NPN+NPN)
Features
z Small package (dual type)
z High voltage and high current
z High hFE, excellent hFE linearity
z Complementary to 2SA1873
SOT-353
Marking: LY LGR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
200
150
-55 to150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=6V,IC=2mA
120
Collector-emitter saturation voltage
VCE(sat) IC=100mA,IB=10mA
Transition frequency
fT
VCE=10V,IC=1mA
80
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
Units
V
V
V
mA
mW
℃
℃
Typ Max Unit
V
V
V
0.1
μA
0.1
μA
400
0.25
V
MHz
3.5
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Y
120-240
LY
GR
200-400
LGR
www.cj-elec.com
1
AD,J,uMna,2r,0210416
Share Link: 