C4690 Просмотр технического описания (PDF) - New Jersey Semiconductor
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C4690 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter BreakdownVoltage lc= 50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 7A; IB= 0.7A
VeE(on) Base-Emitter On Voltage
lc= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB=140V;IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-i
DC Current Gain
lc= 1A;VCE=5V
hpE-2
DC Current Gain
lc= 5A; VCE= 5V
fr
Current-Gain—Bandwidth Product
lc=1A;VCE=5V
COB
Output Capacitance
lE=0;Vce=10V, ftese1MHz
hpE-1 Classifications
R
O
55-110
80-160
2SC4690
MIN TYP. MAX UNIT
140
V
2.0
V
1.5
V
5.0 u A
5.0 u A
55
160
35
30
MHz
220
PF
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