2SC4442 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC4442 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4442
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10rnA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB=0.4A
VeE(sat) Base-Emitter Saturation Voltage
lc= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc= 0.1 A; VCE= 5V
hpE-2
DC Current Gain
fr
Current-Gain—Bandwidth Product
lc= 2A; VCE= 5V
lc=0.5A; VCE=lOV;f= 1MHz
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
lc= 2A; IB1= 0.4A; IB2= -0.8A;
Vcc= 1 50V
MIN TYP. MAX UNIT
400
V
1.5
V
1.5
V
100 u A
100 u A
10
6
5
MHz
0.5
v- s
2.0 u s
0.1 u s
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