2SC3231 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3231 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) Collector-Emitter Saturation Voltage lc= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
lc= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB=170V;IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc=1A;VCE=5V
hpE-2
DC Current Gain
|c= 4A; VCE- 5V
fr
Current-Gain—Bandwidth Product
lc= 0.5A; VCE= 5V
2SC3231
MIN TYP. MAX UNIT
1.0
V
1.5
V
10
uA
10
uA
30
150
20
8
MHz
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