2SC3231 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3231 Datasheet PDF : 2 Pages
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t One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3231
DESCRIPTION
: V(BR,CEO= 60V(Min)
• Large Current Capability
• High Collector PowerDissipation
APPLICATIONS
• Designed for BAA/ TV horizontal deflection output applications.
i
^
PIN 1.BASE
2. COLLECTOR
i
3. EMITTER
TO-220C package
S
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Total Power Dissipation
@ Ta=25"C
PC
Total Power Dissipation
@ Tc-25'C
Tj
Junction Temperature
1
A
2
W
40
150
°C
Tstg
Storage Temperature Range
-55-150
"C
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A
B
C
D
F
G
B
J
K
L
Q
R
S
U
V
mm
MIN MAX
15.70 15.90
9.90 10.10
4.20
0.70
3.40
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
N.I Senii-CoiftliiLtors reserves the right to change test conditions, parameter limits and package dimensions \vithout
not ice. Information furnished by N,l Scmi-(_'onductors is believed to be hoih accurate and reliable at Ihe time of i?.niim
in press. I lo\\e\er, N.I Scmi-Coiiiliictors assumes no ruspoiisihilily for an\s or omissions discovered in its use.
N.I Seini-C'onduciors eiicoura»es customers to verify that Jatasheels aix- ciinvnt before placing orders.
Qualify 5emi-Conductors
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