2SC5622 Просмотр технического описания (PDF) - Panasonic Corporation
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2SC5622 Datasheet PDF : 1 Pages
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Power Transistors
2SC5622
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
• High breakdown voltage: 1 500 V
• High-speed switching
• Wide area of safe operation (ASO)
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
1 500
V
Collector to emitter voltage
VCES
1 500
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
12
A
Collector current
IC
6
A
Base current
IB
3
A
Collector power TC = 25°C
PC
40
W
dissipation
Ta = 25°C
3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
5˚
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Marking Symbol: C5622
Internal Connection
C
B
E
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Diode forward voltage
Storage time
Fall time
ICBO
VEBO
hFE
VCE(sat)
VBE(sat)
fT
VF
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 500 V, IE = 0
IE = 500 mA, IC = 0
VCE = 5 V, IC = 4 A
IC = 4 A, IB = 0.8 A
IC = 4 A, IB = 0.8 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IF = 4 A
IC = 4 A, Resistance loaded
IB1 = 0.8 A, IB2 = −1.6 A
Min Typ Max Unit
50
µA
1
mA
7
V
5
9
5
V
1.5
V
3
MHz
−2
V
5.0
µs
0.5
µs
1
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