2SC3264 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3264 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 25mA ; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 230V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hFE
DC Current Gain
lc= 5A; VCE= 4V
COB
Output Capacitance
!E=O; VcB=10V;ftest= 1.0MHz
fr
Current-Gain—Bandwidth Product
IE=-2A;VCE=12V
Switching times
ton
Turn-on Time
Utg
Storage Time
tf
Fall Time
lc=5A,RL= 120,
!BI= -IB2= 0.5A,VCC- 60V
2SC3264
MIN TYP. MAX UNIT
230
V
2.0
V
100 u A
100 u A
50
140
250
pF
60
MHz
0.3
us
2.4
us
0.5
us
Classifications
0
Y
50-100
70-140
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