2SC3264 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3264 Datasheet PDF : 2 Pages
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^£mi-t?onductoT ^Product*., (Jna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973)376-8960
2SC3264
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 230V(Min)
• Good Linearity of hFE
• Complement to Type 2SA1295
APPLICATIONS
• Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
17
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
5
A
200
W
150
•c
Tstg
Storage Temperature Range
-55-150
"C
1 23
PIN 1.BASE
2.COLLECTOR
3. EMITTER
MT-200 package
mm
DIM MIN MAX
A 21.30 21.70
B 36.10 36.70
C
5.30 6.20
D
1.04
1.07
F
3.10
3.30
G
1.90
2.10
H
3.SO 4.00
J
0.55
0.8S
K 20.00 20.30
L
2.90
3.10
N 10.70 11.10
Q 24.90 24,40
R
s
2.90
2.00
3.30
2.20
u 6.9)0 7.10
Y
S.90
9.10
N.I Semi-1'niiductors reserves the right to change test conditions, parameter limits ;iml package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed lo he both ncciimto niul reliable ai the time of m>in»
in press, I lov\e\er. N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use.
N.I Scnii-Cniiiliicliirs encouraues ciislomers to verily thai datnslieets are eiinvn! before placing orders.
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