2SC3264 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3264 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3264
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
ICBO
Collector Cutoff Current
VCB= 230V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V;ftest= 1.0MHz
IE= -2A; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A ,RL= 12Ω,
IB1= -IB2= 0.5A,VCC= 60V
MIN TYP. MAX UNIT
230
V
2.0
V
100 μA
100 μA
50
140
250
pF
60
MHz
0.3
μs
2.4
μs
0.5
μs
hFE Classifications
O
Y
50-100 70-140
isc Website：www.iscsemi.cn
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