2SB1204 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

2SB1204

High-Current Switching Applications

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Gain bandwidth product

Output capacitance

Collector-emitter saturation voltage

Base-to-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Turn-on time

Storage time

Fall time

Symbol

Testconditons

ICBO VCB = -40V , IE = 0

IEBO VEB = -4V , IC = 0

VCE = -2V , IC = -0.5A

hFE

VCE = -2V , IC = -6A

fT VCE = -5V , IC = -1A

Cob VCB = -10V , f = 1MHz

VCE(sat) IC = -4A , IB = -0.2A

VBE(sat) IC = -4A , IB = -0.2A

V(BR)CBO IC = -10ìA , IE = 0

V(BR)CEO IC = -1mA , RBE =

V(BR)EBO IE = -10ìA , IC = 0

ton

tstg

tf

hFE Classification

Rank

hFE

Q

70 140

R

100 200

S

140 280

T

200 400

Product specification

2SB1204

Min Typ Max Unit

-1 ìA

-1 ìA

70

400

35

130

MHz

95

pF

-250 -500 mV

-0.95 -1.3 V

-60

V

-50

V

-6

V

50

ns

450

ns

20

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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