2SB1353 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

2SB1353

Silicon PNP transistor in a TO-220F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1353

Rev.F Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

Tj

Tstg

DATA SHEET

数值

Rating

-120

-120

-5.0

-1.5

-3.0

1.8

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Base Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-50μA

VCEO IC=-1.0mA

Emitter to Base Breakdown Voltage VEBO IE=-50μA

Collector Cut-Off Current

ICBO VCB=-100V

Emitter Cut-Off Current

IEBO VEB=-4.0V

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=-5.0V

VCE(sat) IC=-1.0A

IC=-0.1A

IB=-0.1A

Base to Emitter Saturation Voltage

Transition Frequency

Collector output capacitance

VBE(sat)

fT

Cob

IC=-1.0A

VCE=-5.0V

f=30MHz

VCB=-10V

f=1.0MHz

IB=-0.1A

IE=0.1A

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-120

V

-120

V

-5.0

V

-1.0 μA

-1.0 μA

60

320

-2.0 V

-1.5 V

50

MHz

30

pF

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