2SB697 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

2SB697

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

Tj=25"C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -5mA;RBE= <"

V(BR)CBO Collector-Base Breakdown Voltage

lc= -5mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; lc= 0

VcE(sat) Collector-Emitter Saturation Voltage |c= -6A; IB= -0.6A

VeEfon) Base-Emitter On Voltage

lc= -1A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; lc= 0

hpE-1 DC Current Gain

lc=-1A;VCE=-5V

hFE-2

DC Current Gain

lc= -5A; VCE= -5V

fr

Current-Gain—Bandwidth Product

lc= -1A; VCE= -5V

hFE.i Classifications

c

D

E

F

40-80 60-120 100-200 160-320

2SB697

MIN TYP. MAX UNIT

-140

V

-160

V

-6

V

-2.5

V

-1.5

V

-0.1

mA

-0.1 mA

40

320

20

15

MHz

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