PHD95N03LT Просмотр технического описания (PDF) - Philips Electronics
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PHD95N03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
120
Pder
(%)
100
80
03aa16
60
40
20
0
0
50
100
150
200
Tmb (oC)
Pder = P-------P----t--o--t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)
100
03ae86
80
60
40
20
0
0
50
100
150
200
Tmb (ºC)
Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A)
102
RDSon = VDS / ID
tp = 10 µs
100 µs
03ae87
1 ms
10
P
δ
=
tp
T
D.C.
10 ms
100 ms
tp
t
T
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08216
Product data
Rev. 01 — 18 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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