PHE13005X Просмотр технического описания (PDF) - Unspecified

Номер в каталоге

Компоненты Описание

производитель

PHE13005X

Silicon diffused power transistor

Unspecified 

WeEn Semiconductors

PHE13005X

Silicon diffused power transistor

IC / IB = 4

Fig. 10. Base-emitter saturation voltage; typical values

Tj = 25 °C

Fig. 11. DC current gain as a function of collector

current; typical values

Fig. 12. Switching times waveforms for resistive load

VIM = - 6 to + 8 V; VCC = 250 V; tp = 20 μs;

δ = tp / T = 0.01

RB and RL calculated from ICon and IBon requirements.

Fig. 13. Test circuit for resistive load switching

PHE13005X

Product data sheet

All information provided in this document is subject to legal disclaimers.

26 April 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

8 / 13

Share Link: