PHE13005X Просмотр технического описания (PDF) - Unspecified

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PHE13005X

Silicon diffused power transistor

Unspecified 

WeEn Semiconductors

PHE13005X

Silicon diffused power transistor

Th ≤ 25 °C

Mounted with heatsink compound and (30 ± 5) N force on the center of the envelope

(1) Ptot maximum and Ptot peak maximum lines

(2) Second breakdown limits

(3) Region of permissible DC operation

(4) Extension of operating region for repetitive pulse operation

(5) Extension of operating region during turn-on in single transistor converters provided that

RBE ≤ 100 Ω and tp ≤ 0.6 μs.

Fig. 3. Forward bias safe operating area

Pder(%)

=

Ptot

Ptot(25°C)

×100%

Fig. 4. Normalized total power dissipation as a function of heatsink temperature

PHE13005X

Product data sheet

All information provided in this document is subject to legal disclaimers.

26 April 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

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