PHE13005X
Silicon diffused power transistor
Rev.03 - 26 April 2018
Product data sheet
1. General description
High-voltage, high-speed planar-passivated, NPN power switching transistor in SOT186A
(TO-220F) plastic package for use in high frequency electronic lighting ballast applications
2. Features and benefits
• Fast switching
• High voltage capability of 700 V
• Low thermal resistance
• Isolated package
3. Applications
• Electronic lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VCESM
collector-emitter
peak voltage
IC
collector current
Ptot
total power dissipation
Symbol Parameter
Static characteristics
hFE
DC current gain
Conditions
VBE = 0 V
DC; Fig. 1; Fig. 2; Fig. 3
Th ≤ 25 °C; Fig. 4
Conditions
IC = 1 A; VCE = 5 V; Th = 25 °C;
Fig. 11
IC = 2 A; VCE = 5 V; Th = 25 °C;
Fig. 11
Values
Unit
700
V
4
26
Min Typ
A
W
Max Unit
12 20 40
10 17 28