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PHE13005 Просмотр технического описания (PDF) - Unspecified

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PHE13005 Datasheet PDF : 13 Pages
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WeEn Semiconductors
PHE13005
Silicon diffused power transistor
9. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
ICES
collector-emitter cut-off
current
ICBO
ICEO
IEBO
VCEOsus
VCEsat
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
collector-emitter
sustaining voltage
collector-emitter
saturation voltage
VBEsat
base-emitter saturation
voltage
hFE
DC current gain
Dynamic characteristics
ts
storage time
tf
fall time
Conditions
VBE = -1.5 V; VCE = 700 V; Tmb = 25 °C
VBE = -1.5 V; VCE = 700 V; Tj = 125 °C
VCB = 700 V; IE = 0 A; Tmb = 25 °C
VCEO = 400 V; IB = 0 A; Tmb = 25 °C
VEB = 9 V; IC = 0 A; Tmb = 25 °C
IB = 0 A; IC = 10 mA; LC = 25 mH;
Tmb = 25 °C; Fig. 6; Fig. 7
IC = 1.0 A; IB = 0.2 A; Tmb = 25 °C;
Fig. 8; Fig. 9
IC = 2.0 A; IB = 0.5 A; Tmb = 25 °C;
Fig. 8; Fig. 9
IC = 4.0 A; IB = 1.0 A; Tmb = 25 °C;
Fig. 8; Fig. 9
IC = 1.0 A; IB = 0.2 A; Tmb = 25 °C;
Fig. 10
IC = 2.0 A; IB = 0.5 A; Tmb = 25 °C;
Fig. 10
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω; Tmb = 25 °C; resistive load;
Fig. 12; Fig. 13
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Tmb = 25 °C; inductive load;
Fig. 14; Fig. 15
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Tmb = 100 °C; inductive load;
Fig. 14; Fig. 15
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω; Tmb = 25 °C; resistive load;
Fig. 12; Fig. 13
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Tmb = 25 °C; inductive load;
Fig. 14; Fig. 15
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Tmb = 100 °C; inductive load;
Fig. 14; Fig. 15
Min Typ Max Unit
-
-
1
mA
-
-
5
mA
-
-
1
mA
-
-
0.1 mA
-
-
1
mA
400 -
-
V
-
0.1 0.5 V
-
0.2 0.6 V
-
0.3 1
V
-
0.85 1.2 V
-
0.92 1.6 V
12
20
40
10
17
28
-
2.7 4
μs
-
1.2 2
μs
-
1.4 4
μs
-
0.3 0.9 μs
-
0.1 0.5 μs
-
0.16 0.9 μs
PHE13005
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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