Philips Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IO
ICM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
emitter-base voltage
open collector
-
output current
-
peak collector current
single pulse;
-
tp ≤ 1 ms
total power dissipation
Tamb ≤ 25 °C
SOT416
[1] -
SOT346
[1] -
SOT883
[2] [3] -
SOT54
[1] -
SOT23
[1] -
SOT323
[1] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Max
−50
−50
−5
−100
−100
150
250
250
500
250
200
+150
150
+150
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
6. Thermal characteristics
Table 7:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Conditions
in free air
Min Typ Max Unit
[1] -
-
833 K/W
[1] -
-
500 K/W
[2] [3] -
-
500 K/W
[1] -
-
250 K/W
[1] -
-
500 K/W
[1] -
-
625 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTA123T_SER_1
Product data sheet
Rev. 01 — 7 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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