PBPC601 Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

PBPC601

6.0A Silicon Rectifier

Vishay Semiconductors 

6.0A Silicon Rectifier

PBPC601–PBPC607

Vishay Lite–On Power Semiconductor

Features

D Diffused junction

D High current capability

D Surge overload rating to 125A peak

D High case dielectric strength of 1500V

D Ideal for printed circuit board applications

D Plastic material has underwriters laboratory

flammability classification 94V–0

D UL Listed under recognized component index,

14 406

file number E95060

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Repetitive peak reverse voltage

=Working peak reverse voltage

=DC Blocking voltage

Peak forward surge current

Average forward current

Junction and storage

temperature range

TC=50°C,

mounted on metal chassis

TC=50°C, mounted on

PC board FR–4 material

Type Symbol Value Unit

PBPC601 VRRM

50

V

PBPC602 =VRWM

100

V

PBPC603 =VR

200

V

PBPC604

400

V

PBPC605

600

V

PBPC606

800

V

PBPC607

1000

V

IFSM

125

A

IFAV

8

A

IFAV

6

A

Tj=Tstg –65...+125 °C

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

Reverse current

I2t Rating for fusing

IF=3A

TC=25°C

TC=100°C

Diode capacitance

Thermal resistance

junction to case

VR=4V, f=1MHz

Type

Symbol Min Typ Max Unit

VF

1.1 V

IR

10 mA

IR

1 mA

I2t

64 A2s

CD

RthJC

55

pF

12.5

K/W

Rev. A2, 24-Jun-98

1 (4)

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