NDS7002A Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

NDS7002A

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

NDS7002A

Rev.D Nov.-2015

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Drain Current- Pulsed

Gate Threshold Voltage

Gate Threshold Voltage

Total Power Dissipation

Storage Temperature Range

符号

Symbol

VDSS

VDGR

ID(Tc=25℃)

IDM

VGS

VGSM

PD

Tstg

DATA SHEET

数值

Rating

60

60

280

1500

±20

±40

300

-55～150

单位

Unit

V

V

mA

mA

V

V

mW

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Drain–Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate–Body Leakage.

Static Drain–Source

On–Resistance

Forward Transconductance

Drain-Source Diode Forward

Voltage

Gate Threshold Voltage

On-State Drain Current

Drain-Source On-Voltage

Turn–On Delay Time

Turn–Off Delay Time

符号

Symbol

V(BR)DSS

IDSS

IGSS

RDS(on)1

RDS(on)2

gFS

VSD

VGS(th)

ID(on)

VDS(on)(1)

VDS(on)(2)

td(on)

td(off)

测试条件

Test Conditions

VGS=0

ID=10μA

VGS=0

VDS=60V

VGS=±20V VDS=0V

VGS=10V ID=0.5A

VGS=5V

ID=0.05A

VDS≥2.0VDS(on)

ID=200mA

VGS=0V

IS=400mA

最小值 典型值

Min Typ

60

1.2

1.7

80 320

0.88

VDS=VGS ID=250μA 1.0

2.1

VDS=10V

VDS≥2.0VDS(on)

500 2700

VGS=10V ID=500mA

0.6

VGS=5.0V

VDD=30V

RGEN=25Ω

VGS=10V

ID=50mA

ID=200mA

RL=150Ω

0.09

最大值

Max

1.0

±100

2.0

3.0

1.2

2.5

1.0

0.15

20

20

单位

Unit

V

μA

nA

Ω

Ω

mS

V

V

mA

V

V

ns

ns

http://www.fsbrec.com

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