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NDS9947

Dual 20V P-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

May 2002

NDS9947

Dual 20V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (–4.5V to – 20V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –3.5 A, –20 V

RDS(ON) = 100 mΩ @ VGS = –10 V

RDS(ON) = 190 mΩ @ VGS = –4.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

DD1

DD1

DD2

DD2

SO-8

Pin 1 SO-8

SS2GS2SS1GG1

5

4

6

Q1

3

7

2

Q2

8

1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

TJ, TSTG

(Note 1c)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

NDS9947

NDS9947

13’’

Ratings

–20

±20

–3.5

–15

2

1.6

1.0

0.9

–55 to +175

78

135

40

Tape width

12mm

Units

V

V

A

W

°C

°C/W

Quantity

2500 units

2002 Fairchild Semiconductor Corporation

NDS9947 Rev B(W)

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