CXA3238TN Просмотр технического описания (PDF) - Sony Semiconductor

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производитель

CXA3238TN

6/4-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive

Sony Semiconductor 

CXA3238TN/CXA3239TN

No.

Item

Bank Write Enable

4-1

voltage

Bank Write Enable

4-2

current

5-1 FLT output low voltage

Symbol

VSEH

Measurement conditions

ISEH

VFLTL External resistance=2.4 kΩ

5-2 FLT output high voltage

VFLTH External resistance=2.4 kΩ

6 BHV gain accuracy

Read Characteristics

R1 Low Gain

R2 High Gain

Low frequency cut-off

R3

(–3 dB)

High frequency cut-off

R4

(–3 dB)

R5 Input reflected noise

VBHV=VCC–4×IB×(RMR+5.5 Ω)

EBHV

IB=“1,1,1”

RMR=50 Ω

RMR=50 Ω, IB=6.0 mA

[GAIN]=0

AVL

RMR=50 Ω, IB=6.0 mA

[GAIN]=1

AVH

RMR=50 Ω, IB=6.0 mA

FCL

FCH

Exclusive of Head noise

ENI

RMR=50 Ω, IB=6.0 mA

R6 MR bias current range 1

IBR1

R7 MR bias accuracy

EIB

R8 MR bias resolution

RIB 3 bit DAC

VCC power supply

R9-1

rejection ratio

Ripple voltage : 100 mVp-p

PSRR1

100 kHz to 50 MHz

VEE power supply

R9-2

rejection ratio

Ripple voltage : 100 mVp-p

PSRR2

100 kHz to 10 MHz

Common mode

R10-1

rejection ratio 1

Ripple voltage : 100 mVp-p

CMRR1

100 kHz to 50 MHz

Common mode

R10-2

rejection ratio 2

Ripple voltage : 100 mVp-p

CMRR2

51 MHz to 80 MHz

Control line input noise

R11

rejection

Ripple voltage : 100 mVp-p

CLRR

4 MHz to 80 MHz

RDX/RDY offset difference

R12

VOFF1 Write to Read

magnitude

RDX/RDY output

R13

impedance

RDro Differential, read mode

Min. Typ. Max. Unit

VCC

+1.2

VCC

V

+1.4

6

14 mA

0.8 V

4.5

V

–8

8

%

115 140 165 V/V

155 190 225 V/V

350 550 kHz

140 200

MHz

0.77 0.95 nV/ √ Hz

3

8 mA

–7

+7 %

0.714

mA

38

dB

45

dB

37

dB

27

dB

40

dB

50 mV

30

100 Ω

—11—

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