MMDT5551 Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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MMDT5551 Datasheet PDF : 3 Pages
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Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT5551
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IC=100μA IE=0
IC=1mA IB=0
IE=10μA IC=0
180 -
V
160 -
V
6
-
V
Collector cut-off current
ICBO
VCB=120V IE=0
-
50 nA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
VBE(sat)
fT
Cobo
NF
VEB=4V IC=0
VCE=5V IC=1.0mA
VCE=5V IC=10mA
VCE=5V IC=50mA
IC=10mA IB=1mA
IC=50mA IB=5mA
IC=10mA IB=1mA
IC=50mA IB=5mA
VCE=10V IC=10mA f=100MHz
VCB=10V,f=1.0MHz,IE=0
VCE=5V,f=1.0kHz,IC=200μA
Rg=1.0kΩ
-
50 nA
80 -
80 250 -
30 -
0.15
-
V
0.2
-
1
V
-
1
100 300 MHz
-
6
pF
-
8.0 dB
G010
Rev.A
www.gmicroelec.com
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