MMDT5551 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

MMDT5551

Dual NPN Small Signal Surface Mount Transistor

Galaxy Semi-Conductor 

Production specification

Dual NPN Small Signal Surface Mount Transistor MMDT5551

FEATURES

z Epitaxial planar die construction.

z Complementary PNP type available

MMDT5401.

z Ultra-small surface mount package.

Pb

Lead-free

APPLICATIONS

z Dual NPN small signal surface mount transistor.

ORDERING INFORMATION

Type No.

Marking

MMDT5551

K4N

SOT-363

Package Code

SOT-363

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

VCBO

VCEO

VEBO

IC

PD

RθJA

Tj,Tstg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Power Dissipation

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

180

160

6

200

200

625

-55 to +150

Unit

V

V

V

mA

mW

℃/W

℃

G010

Rev.A

www.gmicroelec.com

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