MMBTA43 Просмотр технического описания (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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производитель

MMBTA43

TRANSISTOR(NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

MMBTA43

TRANSISTOR(NPN)

SOT–23

FEATURES

 High Voltage Application

 Telephone Application

 Complementary to MMBTA93

MARKING:ABX

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

200

VCEO Collector-Emitter Voltage

200

VEBO Emitter-Base Voltage

5

IC

Collector Current

500

PC

Collector Power Dissipation

350

RΘJA Thermal Resistance From Junction To Ambient

357

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max Unit

Collector-base breakdown voltage

V(BR)CBO IC=0.1mA, IE=0

200

V

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA, IB=0

200

V

Emitter-base breakdown voltage

V(BR)EBO IE=0.1mA, IC=0

5

V

hFE(1)* VCE=10V, IC=10mA

40

DC current gain

hFE(2)* VCE=10V, IC=1mA

40

hFE(3)* VCE=10V, IC=30mA

40

Collector-emitter saturation voltage

VCE(sat)* IC=20mA, IB=2mA

0.5

V

Base-emitter saturation voltage

VBE(sat)* IC=20mA, IB=2mA

0.9

V

Transition frequency

fT

VCE=20V,IE=10mA, f=100MHz

50

MHz

Collector output capacitance

Cob

VCB=20V, IE=0, f=1MHz

4

pF

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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