2SA1941 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SA1941 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1941
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-50mA; IB= 0
-140
V
VcE(sat) Collector-Emitter Saturation Voltage lc= -7.0A; IB= -0.7A
VsE(on)
Base-Emitter On Voltage
lc=-5A;VCE=-5V
ICBO
Collector Cutoff Current
VCB=-140V; IE=0
-2.0
V
-1.5 V
-5
WA
IEBO
Emitter Cutoff Current
VEB= -5V; lc=0
-5
nA
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
55
160
hpE-2
DC Current Gain
lc= -5A ; VCE= -5V
35
COB
Output Capacitance
lE=0;VcB=-10V;ftest= 1.0MHz
320
pF
ft
Current-Gain—Bandwidth Product
lc=-1A; VCE=-5V
30
MHz
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