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MJD29C Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MJD29C
NPN Epitaxial Silicon Transistor
Fairchild Semiconductor
MJD29C Datasheet PDF : 4 Pages
1
2
3
4
Typical Characteristics
1000
100
V
CE
= 2V
10
1
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
I
C
=10I
B
1
t
R
, V
CC
=30V
t
R
, V
CC
=10V
0.1
t
D
, V
BE
(off)=2V
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
Figure 3. Turn Off Time
20
15
10
5
0
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
10
I
C
=10I
B
t
STG
1
t
F
, V
CC
=30V
t
F
, V
CC
=10V
0.1
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
Figure 2. Turn On Time
100
10
1
1ms
5001
µ
0s0
µ
s
DC
0.1
0.01
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A2, June 2001
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