MJE222 Просмотр технического описания (PDF) - Central Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MJE222 Datasheet PDF : 2 Pages
| |||
MJE220 THRU MJE225
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE220 series
types are NPN silicon power transistors, manufactured
by the epitaxial-base process, designed for general
purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
ΘJA
ΘJC
MJE220
MJE223
MJE221
MJE224
MJE222
MJE225
60
80
40
60
7.0
4.0
8.0
1.0
1.5
15
-65 to +150
83.4
8.34
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TC=125°C
IEBO
VEB=7.0V
BVCEO
IC=10mA (MJE220, MJE221, MJE222)
40
BVCEO
IC=10mA (MJE223, MJE224, MJE225)
60
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=1.0A, IB=100mA (MJE221, MJE224)
VCE(SAT) IC=2.0A, IB=200mA (MJE220, MJE223)
VCE(SAT) IC=4.0A, IB=1.0A
VBE(SAT) IC=2.0A, IB=200mA
VBE(ON)
VCE=1.0V, IC=500mA
hFE
VCE=1.0V, IC=200mA (MJE220, MJE223) 40
hFE
VCE=1.0V, IC=200mA (MJE221, MJE224) 40
hFE
VCE=1.0V, IC=200mA (MJE222, MJE225) 25
hFE
VCE=1.0V, IC=1.0A (MJE221, MJE224)
20
hFE
VCE=1.0V, IC=1.0A (MJE222, MJE225)
10
hFE
VCE=1.0V, IC=2.0A (MJE220, MJE223)
20
fT
VCE=10V, IC=100mA, f=10MHz
10
Cob
VCE=10V, IE=0, f=100kHz
MAX
100
100
100
0.3
0.6
0.8
2.5
1.8
1.5
200
150
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
MHz
50
pF
R2 (26-November 2012)
Share Link: 