MJE370 Просмотр технического описания (PDF) - New Jersey Semiconductor
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MJE370 Datasheet PDF : 1 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJE370 PNP
MJE520 NPN
SILICON COMPLEMENTARY
POWER TRANSISTORS
JEDEC TO-126 CASE
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJE370, MJE520 types are Complementary Silicon Power Transistors
designed for use in general purpose a m p l i f i e r and switching applications.
MAXIMUM RATINGS (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Col lector Current
Collector Current (PEAK)
Power 0 i ss i pa t ion
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS (TC=25°C)
SYMBOL
TEST CONDITIONS
'CBO
IEBO
VCB=30V
vEB=4.ov
lc=100mA
VCE=1.0V, IC=1.0A
SYMBOL
VCBO
VCEO
VEBO
CM
stg
9JC
30
30
4.0
3-0
7.0
25
-65 TO -1-150
5.0
MIN MAX
100
100
30
25
UNIT
V
V
V
A
A
W
°C
°C/W
UNIT
PA
V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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