MJ13332 Просмотр технического описания (PDF) - Mospec Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MJ13332 Datasheet PDF : 2 Pages
| |||
MJ13332, MJ13333, MJ13334, MJ13335 NPN
ELECTRICAL CHARATERISTICS (TC=25OC unless otherwise noted)
Characteristic
Symbol
Min.
OFFCHARACTERISTICS
Collector-Emitter Sustaining Voltage
( IC = 100 mAdc, IB = 0 )
MJ13332
MJ13333
MJ13334
VCEO(sus)
350
400
450
MJ13335
500
Collector Current
( VCE = Rated VCEV, VBE(off) = 1.5V )
Emitter Cutoff Current
( VBE= 6.0 Vdc, Ic = 0 )
ICEV
--
IEBO
--
ON CHARACTERISTICS(1)
DC current gain
( IC = 5.0 Adc, VCE = 5.0 Vdc )
Collector-Emitter Saturation Voltage
( IC = 10 Adc, IB = 2.0 Adc )
( IC = 20 Adc, IB = 6.7 Adc )
Base-Emitter Saturation Voltage
( IC = 10 Adc, IB = 2.0 Adc )
hFE
10
VCE(sat)
--
--
VBE(sat)
--
DYNAMIC CHARACTERISTICS
Output Capacitance
( VCB = 10 Vdc, IE = 0 , f=1.0 KHz )
Cob
125
SWITCHING CHARATERISTICS
Delay time
Rise Time
Storage Time
td
--
Vcc=250V, IC=10A
IB1=2.0A,VBE=5.0V,tP=10us
tr
--
Duty Cycle≦2.0%
tS
--
Fall Time
tr
--
(1) Pulse test: Pulse Width=300 s, Duty Cycle≦ 2.0%
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Max
Unit
--
--
--
V
--
5.0
mAdc
1.0
mAdc
60
1.8
Vdc
5.0
1.8
Vdc
500
pF
0.1
µs
0.7
µs
4.0
µs
0.7
µs
Share Link: 