MJF13007 Просмотр технического описания (PDF) - Inchange Semiconductor
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MJF13007 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF13007
DESCRIPTION
·With TO-220F package
·High voltage ,high speed
APPLICATIONS
·Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
·
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
IBM
Base current-Peak
IE
Emitter current
IEM
Emitter current-Peak
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
700
400
9
8
16
4
8
12
24
40
150
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
℃
℃
VALUE
3.12
UNIT
℃/W
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