MJE172(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor
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MJE172 Datasheet PDF : 4 Pages
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MJE170/171/172
PNP EPITAXIAL SILICON TRANSISTOR
LOW POWER AUDIO AMPLIFIER
LOW CURRENT, HIGH SPEED
SWITCHING APPLICATIONS
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage : MJE170
: MJE171
: MJE172
Collector-Emitter Voltage
: MJE170
: MJE171
: MJE172
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TA=25°C)
Collector Dissipation ( TC=25°C)
Junction Temperature
Storage Temperature
Symbol
VCBO
Rating
-60
-80
-100
VCEO
IEBO
IC
IC
IB
PC
PC
TJ
TSTG
-40
-60
-80
-7
-3
-6
-1
1.5
12.5
150
-65 ~ 150
Unit
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TC=25°C)
Characteristic
Collector Emitter Sustaining Voltage
: MJE170
: MJE171
: MJE172
Collector Cutoff Current : MJE170
: MJE171
: MJE172
: MJE170
: MJE171
: MJE172
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Symbol
Test Conditions
VCEO(sus) IC = 10mA, IB = 0
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
COB
VCB = - 60V, IB = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
VCB = - 60V, IE = 0, TC = 150°C
VCB = - 80V, IE = 0, TC = 150°C
VCB = - 100V, IE = 0, TC = 150°C
VBE = - 7V, IC = 0
VCE = - 1V, IC = - 100mA
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 1.5A
IC = - 500mA, IB = - 50mA
IC = - 1.5A, IB = - 150mA
IC = - 3A, IB = - 600mA
IC = - 1.5A, IB = - 150mA
IC = - 3A, IB = - 600mA
VCE = - 1V, IC = - 500mA
VCE = - 10V, IC = - 100mA, f = 10MHz
VCB = - 10V, IE = 0, f = 0.1MHz
Min Max Unit
-40
V
-60
V
-80
V
-0.1
µA
-0.1
µA
-0.1
µA
-0.1
mA
-0.1
mA
-0.1
mA
-0.1
µA
50
250
30
12
-0.3
V
-0.9
V
-1.7
V
-1.5
V
-2.0
V
-1.2
V
50
MHz
50
pF
©1999 Fairchild Semiconductor Corporation
Rev. B.1
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