MJE200 Просмотр технического описания (PDF) - Inchange Semiconductor

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MJE200

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJE200

DESCRIPTION

·Low Collector–Emitter Saturation Voltage-

·DC Current Gain-Bandwidth Product

·High DC Current Gain

·Complement to MJE210

APPLICATIONS

·Designed for low voltage, low-power, high-gain audio

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

5

A

IBB

Base Current

Collector Power Dissipation

PC

TC=25℃

Ti

Junction Temperature

Tstg

Storage Temperature Range

1

A

15

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

8.34 ℃/W

Thermal Resistance,Junction to Ambient 83.4 ℃/W

isc Website：www.iscsemi.cn

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