MJE210G Просмотр технического описания (PDF) - ON Semiconductor
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MJE210G Datasheet PDF : 6 Pages
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MJE200G (NPN), MJE210G (PNP)
10K
5K
3K
ts
VCC = 30 V
IC/IB = 10
2K
IB1 = IB2
1K
TJ = 25°C
500
300
200
100
tf
50
30 MJE200
20 MJE210
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
200
TJ = 25°C
Cib
100
70
50
Cob
30
MJE200 (NPN)
MJE210 (PNP)
20
0.4 0.6 1.0
2.0
4.0 6.0 10
20
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
NPN
MJE200
PNP
MJE210
400
TJ = 150°C
25°C
200
- 55°C
100
80
60
400
200
TJ = 150°C
25°C
100
80
- 55°C
60
40
20
0.05 0.07 0.1
VCE = 1.0 V
40
VCE = 2.0 V
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
20
0.05 0.07 0.1
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE = 1.0 V
VCE = 2.0 V
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
2.0
TJ = 25°C
1.6
2.0
TJ = 25°C
1.6
1.2
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
2.0 3.0 5.0
VCE(sat) @ IC/IB = 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltage
2.0 3.0 5.0
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