MJ10025 Просмотр технического описания (PDF) - New Jersey Semiconductor
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производитель
MJ10025
New Jersey Semiconductor
MJ10025 Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS ( Tc = 25'C unless otherwise noted )
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage
(lc = 100mA, l_ = 0 )
MJ10024
vceo<«us)
750
MJ10025
850
Collector Cutoff Current
( VCEV= Rated Value, V^^l .5 V )
ICEV
( VCEV= Rated Value, VBE(OFF)=1 ,5 V ,TC=1 50 °C)
Collector Cutoff Current
(V^ Rated V^R^SO Q,Te-100°C)
'CER
Emitter Cutoff Current
'EBO
(VEB = 2.0V,IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0A,VCE = 5.0V)
Collector - Emitter Saturation Voltage
(IC = 10A.IB=1.0A)
(IC = 20A, IB = 5.0 A )
( lc = 10 A , IB ~ 1.0 A ,TC=100 °C)
Base - Emitter Saturation Voltage
(IC=10A,IB=1.0A)
( lc= 10 A , IB * 1.0 A ,TC=100 °C)
Diode Forward Voltage
(IF = 10A)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB=10V, lE=0,f=1.0kHz)
hFE
50
VCE,^
VB^
V'
Cob
100
SWITCHING CHARACTERISTICS
Delay Time
VCC = 250V, I C - 1 0 A
td
Rise Time
lB1 = 1.0A,VBE(orr)=5.0V
*r
Storage Time
to = SOus.Duty Cycle S 2%
«.
Fall Time
tf
(1) Pulse Test Pulse width • 300 n* , Duty Cycle < 2.0%
MJ10024, MJ10025 NPN
MM
Unit
V
0.25
mA
5.0
5.0
mA
mA
175
600
V
2.2
5.0
2.5
V
2,5
2.5
V
4.0
PF
600
0.4
us
1.8
us
5.0
us
1.8
us
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