MJ11033 Просмотр технического описания (PDF) - Inchange Semiconductor

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MJ11033

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJ11033

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0

-120

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -25A; IB= -250mA

V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -50A; IB= 500mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= -25A; IB= -250mA

VBE(sat)-2 Base-Emitter Saturation Voltage

ICER

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= -50A; IB= -500mA

VCE=-120V; RBE=1kΩ

VCE=-120V; RBE=1kΩ; TC=150℃

VCE= -50V; IB= 0

-2.5

V

-3.5

V

-3.0

V

-4.5

V

-2.0

-5.0

mA

-2.0 mA

IEBO

Emitter Cutoff Current

hFE-1

DC Current Gain

hFE-2

DC Current Gain

VEB= -5V; IC= 0

IC= -25A, VCE= -5V

IC= -50A, VCE= -5V

1000

400

-5.0 mA

18000

isc Website：www.iscsemi.cn

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