MGB15N40CL Просмотр технического описания (PDF) - ON Semiconductor
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MGB15N40CL Datasheet PDF : 8 Pages
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MGP15N40CL, MGB15N40CL, MGC15N40CL
20
18 VCC = 300 V
16
VGE = 5.0 V
Tj = 25°C
14 IC = 10 A
12 L = 300 µH
td(off)
10
8
tf
6
4
2
0
250
500
750
RG, GATE RESISTANCE (OHMS)
1000
Figure 7. Switching Speed versus Gate Resistance
20
18
16
14
12
10
8
6
4
2
0
250
td(off)
tf
VCC = 300 V
VGE = 5.0 V
Tj = 150°C
IC = 10 A
L = 300 µH
500
750
1000
RG, GATE RESISTANCE (OHMS)
Figure 8. Switching Speed versus Gate Resistance
20
18
VCC = 300 V
VGE = 5.0 V
16 RG = 1000 Ω
14
IC = 10 A
L = 300 µH
12
10
8
6
4
2
0
–50 –25 0 25
td(off)
tf
50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 9. Switching Speed versus Case Temperature
20
18
td(off)
16
14
12
10
8
6
VCC = 300 V
VGE = 5.0 V
4 RG = 1000 Ω
2
Tj = 150°C
L = 300 µH
0
0
2
4
6
tf
8 10 12 14 16
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Total Switching Losses
versus Collector Current
30
25
20
150°C
15
25°C
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
10
5
0
0 1 2 3 4 5 6 7 8 9 10
INDUCTOR (mH)
Figure 11. Latch Current versus Inductor (Typical)
20
18
3.0 mH
16
14
6.0 mH
12
10
8
6
VCC = 50 V
4
VGE = 5.0 V
RG = 1000 Ω
2
0
0
25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 12. Latch Current versus Temperature (Typical)
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