EMX18 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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производитель

EMX18

SOT-563 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JC(T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

EMX18 DUAL TRANSISTOR(NPN+NPN)

SOT-563

FEATURES

z Two 2SC5585 chips in a package

z Mounting possible with SOT-563 automatic mounting machines

1

z Transistor elements are independent, eliminating interference

z Mounting cost and area be cut in half

Marking: X18

Equivalent circuit

Absolute maximum ratings (Ta=25℃)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

15

12

6

500

150

150

-55-150

Units

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

V(BR)CBO IC=10μA, IE=0

V(BR)CEO IC=1mA, IB=0

V(BR)EBO IE=10μA, IC=0

ICBO

VCB=15V, IE=0

IEBO

VEB=6V, IC=0

hFE

VCE=2V, IC=10mA

VCE(sat) IC=200mA, IB=10mA

fT

VCE=2V, IE=-10mA, f=100MHz

Cob

VCB=10V, IE=0, f=1MHz

Min Typ Max Unit

15

V

12

V

6

V

0.1

μA

0.1

μA

270

680

0.25

V

320

MHz

7.5

pF

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1

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